CEG3456
CET
106.04kb
Dual n-channel mosfet.
TAGS
📁 Related Datasheet
CEG3456A - N-Channel MOSFET
(CET)
CEG3456A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V.
Super High de.
CEG2108E - Dual N-Channel MOSFET
(CET)
CEG2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 15mΩ @VGS = .
CEG2287 - Dual P-Channel MOSFET
(CET)
CEG2287
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -4.7A, RDS(ON) = 30mΩ @VGS = -10V. Super High dense cell.
CEG2288 - Dual N-Channel MOSFET
(CET)
CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V.
Super Hi.
CEG6946 - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
.
CEG6946A - Dual N-Channel MOSFET
(CET)
CEG6946A
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V.
Super H.
CEG8205 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High.
CEG8205 - Dual N-Channel MOSFET
(VBsemi)
CEG8205-VB
CEG8205-VB Datasheet
Dual N-Channel 25-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 4.5 V 25
0.032.
CEG8205A - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEG8205A
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V..
CEG8208 - Dual N-Channel MOSFET
(CET)
CEG8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super Hi.