CEG9926, CEG9926_Chino - Dual N-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology

Datasheet Details

Part number	CEG9926, CEG9926_Chino
Manufacturer	Chino-Excel Technology
File Size	56.15 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CEG9926_Chino-ExcelTechnology.pdf
Note	This datasheet PDF includes multiple part numbers: CEG9926, CEG9926_Chino. Please refer to the document for exact specifications by model.

20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 6 S2 5 G2 ȀȀȀ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range G1 S1 S1 D1 9 TSSOP-8.

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Published: Mar 23, 2005 |