Part number:
CEH2609
Manufacturer:
CET
File Size:
597.96 KB
Description:
Dual enhancement mode field effect transistor.
* 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. 4 5
CEH2609
CET
597.96 KB
Dual enhancement mode field effect transistor.
📁 Related Datasheet
CEH2608 Dual MOSFET (CET)
CEH2288 N-Channel MOSFET (CET)
CEH2305 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2307 P-Channel MOSFET (CET)
CEH2310 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2312 N-Channel MOSFET (CET)
CEH2313 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321 P-Channel Enhancement Mode Field Effect Transistor (CET)