CEH2609 Dual Enhancement Mode Field Effect Transistor

CET

Description

CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) .

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Datasheet Specifications

Part number: CEH2609
Manufacturer: CET
File Size: 597.96 KB
Datasheet: CEH2609-CET.pdf
Description: Dual Enhancement Mode Field Effect Transistor

Features

* 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 80mΩ @VGS = 2.5V. -20V, -2.5A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 145mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. 4 5

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CEH2609 Dual Enhancement Mode Field Effect Transistor CET

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