Datasheet Specifications
- Part number
- CEH2311
- Manufacturer
- CET
- File Size
- 132.55 KB
- Datasheet
- CEH2311_CET.pdf
- Description
- P-Channel Enhancement Mode Field Effect Transistor
Description
CEH2311 P-Channel Enhancement Mode Field Effect Transistor .Features
* -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-SourceCEH2311 Distributors
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