Part number:
CEH2311
Manufacturer:
CET
File Size:
132.55 KB
Description:
P-channel enhancement mode field effect transistor.
* -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source
CEH2311
CET
132.55 KB
P-channel enhancement mode field effect transistor.
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