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CEH2313

P-Channel Enhancement Mode Field Effect Transistor

CEH2313 Features

* -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Vo

CEH2313 Datasheet (132.40 KB)

Preview of CEH2313 PDF

Datasheet Details

Part number:

CEH2313

Manufacturer:

CET

File Size:

132.40 KB

Description:

P-channel enhancement mode field effect transistor.

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CEH2313 P-Channel Enhancement Mode Field Effect Transistor CET

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