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CEH2313 P-Channel Enhancement Mode Field Effect Transistor

CEH2313 Description

CEH2313 P-Channel Enhancement Mode Field Effect Transistor .

CEH2313 Features

* -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Vo

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Datasheet Details

Part number
CEH2313
Manufacturer
CET
File Size
132.40 KB
Datasheet
CEH2313_CET.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor CET
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