CEH2312 Datasheet, Mosfet, CET

CEH2312 Features

• Mosfet 20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package

PDF File Details

Part number:

CEH2312

Manufacturer:

CET

File Size:

105.83kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

CEH2312

CET

📁 Related Datasheet

CEH2310 - N-Channel Enhancement Mode Field Effect Transistor (CET)
.DataSheet.co.kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = .

CEH2311 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. High dens.

CEH2313 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense c.

CEH2316 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell d.

CEH2305 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2305 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.

CEH2307 - P-Channel MOSFET (CET)
CEH2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V. High dense.

CEH2321 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. High dense .

CEH2321A - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -.

CEH2331 - P-Channel FET (Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VG.

CEH2288 - N-Channel MOSFET (CET)
CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. High dense c.