Datasheet Details
- Part number
- CEH2312
- Manufacturer
- CET
- File Size
- 105.83 KB
- Datasheet
- CEH2312-CET.pdf
- Description
- N-Channel MOSFET
CEH2312 Description
CEH2312 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .CEH2312 Features
* 20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Paramete
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