Part number:
CEH2312
Manufacturer:
CET
File Size:
105.83 KB
Description:
N-channel mosfet.
* 20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 G(3) D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Paramete
CEH2312
CET
105.83 KB
N-channel mosfet.
📁 Related Datasheet
CEH2310 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2313 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2305 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2307 P-Channel MOSFET (CET)
CEH2321 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321A P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2331 P-Channel FET (Chino-Excel Technology)
CEH2288 N-Channel MOSFET (CET)
