CEH2310 Datasheet, Transistor, CET

CEH2310 Features

• Transistor 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product i

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CEH2310

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CET

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

TAGS

CEH2310

CET

📁 Related Datasheet

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