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CEH2310 N-Channel Enhancement Mode Field Effect Transistor

CEH2310 Description

www.DataSheet.co.kr CEH2310 N-Channel Enhancement Mode Field Effect Transistor .

CEH2310 Features

* 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSOLUTE MAXIMUM RATINGS Paramete

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Datasheet Details

Part number
CEH2310
Manufacturer
CET
File Size
112.68 KB
Datasheet
CEH2310_CET.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor CET
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