Part number:
CEH2310
Manufacturer:
CET
File Size:
112.68 KB
Description:
N-channel enhancement mode field effect transistor.
* 30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 5 6 3 2 1 TSOP-6 S(4) G(3) 4 D(1,2,5,6,) PRELIMINARY ABSOLUTE MAXIMUM RATINGS Paramete
CEH2310
CET
112.68 KB
N-channel enhancement mode field effect transistor.
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