CEH2331, CEH2331_Chino P-Channel FET

Chino-Excel Technology

CEH2331 Description

P-Channel Enhancement Mode Field Effect Transistor .

CEH2331 Features

* -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TSOP-6 2 3 CEH2331 PRELIMINARY D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM

📥 Download Datasheet

CEH2331 Datasheet Preview — This datasheet PDF includes multiple part numbers: CEH2331, CEH2331_Chino. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: CEH2331, CEH2331_Chino
Manufacturer: Chino-Excel Technology
File Size: 453.57 KB
Datasheet: CEH2331_Chino-ExcelTechnology.pdf
Description: P-Channel FET
Note: This datasheet PDF includes multiple part numbers: CEH2331, CEH2331_Chino.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

CEH2305 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2307 - P-Channel MOSFET (CET)
CEH2310 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2312 - N-Channel MOSFET (CET)
CEH2313 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321 - P-Channel Enhancement Mode Field Effect Transistor (CET)

📌 All Tags

P-Channel FET Chino-Excel Technology

Chino-Excel Technology CEH2331-like datasheet