Part number:
CEH2331
Manufacturer:
Chino-Excel Technology
File Size:
453.57 KB
Description:
P-channel fet.
* -20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TSOP-6 2 3 CEH2331 PRELIMINARY D(1,2,5,6,) S(4) ABSOLUTE MAXIMUM
CEH2331
Chino-Excel Technology
453.57 KB
P-channel fet.
📁 Related Datasheet
CEH2305 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2307 P-Channel MOSFET (CET)
CEH2310 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2312 N-Channel MOSFET (CET)
CEH2313 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321 P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2321A P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2288 N-Channel MOSFET (CET)
