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CEH2321 P-Channel Enhancement Mode Field Effect Transistor

CEH2321 Description

CEH2321 P-Channel Enhancement Mode Field Effect Transistor .

CEH2321 Features

* -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source V

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Datasheet Details

Part number
CEH2321
Manufacturer
CET
File Size
131.98 KB
Datasheet
CEH2321_CET.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor CET
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