CEH2321 Datasheet, Transistor, CET

CEH2321 Features

• Transistor -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 packa

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Part number:

CEH2321

Manufacturer:

CET

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131.98kb

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📄 Datasheet

Description:

P-channel enhancement mode field effect transistor.

TAGS

CEH2321

CET

📁 Related Datasheet

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CEH2321A P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -.

CEH2305 - P-Channel Enhancement Mode Field Effect Transistor (CET)
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CEH2307 - P-Channel MOSFET (CET)
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CEH2310 - N-Channel Enhancement Mode Field Effect Transistor (CET)
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CEH2311 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. High dens.

CEH2312 - N-Channel MOSFET (CET)
CEH2312 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V.

CEH2313 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2313 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense c.

CEH2316 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEH2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell d.

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CEH2288 - N-Channel MOSFET (CET)
CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. High dense c.