CEH2321A Datasheet, Effect Transistor, CET

P-channel enhancement mode field effect transistor

CEH2321A

CET

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P-channel enhancement mode field effect transistor.

-20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 75mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS

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