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CEH2316 N-Channel Enhancement Mode Field Effect Transistor

CEH2316 Description

CEH2316 N-Channel Enhancement Mode Field Effect Transistor .

CEH2316 Features

* 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage

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Datasheet Details

Part number
CEH2316
Manufacturer
CET
File Size
133.16 KB
Datasheet
CEH2316_CET.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor CET
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