CEH2316 N-Channel Enhancement Mode Field Effect Transistor

CET

Description

CEH2316 N-Channel Enhancement Mode Field Effect Transistor .

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Datasheet Specifications

Part number: CEH2316
Manufacturer: CET
File Size: 133.16 KB
Datasheet: CEH2316_CET.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage

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CEH2316 N-Channel Enhancement Mode Field Effect Transistor CET

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