Part number:
CEH2316
Manufacturer:
CET
File Size:
133.16 KB
Description:
N-channel enhancement mode field effect transistor.
* 30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,) ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage
CEH2316
CET
133.16 KB
N-channel enhancement mode field effect transistor.
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