CEP21A2 Datasheet, Mosfet, CET

CEP21A2 Features

• Mosfet 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is

PDF File Details

Part number:

CEP21A2

Manufacturer:

CET

File Size:

103.31kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

CEP21A2

CET

📁 Related Datasheet

CEP21A3 - N-Channel MOSFET (CET)
CEP21A3/CEB21A3 Nov. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ .

CEP2103A - Wide-Input Sensorless CC/CV Step-Down DC/DC Converter (ChipExtra)
CEP2103A Rev 1.0, May, 2013 Wide-Input Sensorless CC/CV Step-Down DC/DC Converter FEATURES  42V Input Voltage Surge  40V Steady State Operation  .

CEP20A03 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEP20A03/CEB20A03 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 197A, RDS(ON) = 2 mΩ @VGS = 10V. RDS(ON) = 3 mΩ @VG.

CEP20N06 - N-Channel MOSFET (CET)
CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super hig.

CEP20P06 - P-Channel MOSFET (CET)
CEP20P06/CEB20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Sup.

CEP20P10 - P-Channel Enhancement Mode Field Effect Transistor (CET)
CEP20P10/CEB20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. Super high dense.

CEP01N6 - N-Channel MOSFET (CET)
CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 6.

CEP01N65 - N-Channel MOSFET (CET)
CEP01N65/CEB01N65 CEF01N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP01N65 CEB01N65 CEF01N65 VDSS 650V 650.

CEP01N6G - N-Channel MOSFET (CET)
CEP01N6G/CEB01N6G CEF01N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6G CEB01N6G CEF01N6G VDSS 600V 600V 600V RDS(ON).

CEP02N6 - N-channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 2A , RDS(ON)=5Ω @VGS=10V. Super high dens.