CEP3205 Datasheet, Transistor, CET

CEP3205 Features

• Transistor 55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-26

PDF File Details

Part number:

CEP3205

Manufacturer:

CET

File Size:

422.94kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

TAGS

CEP3205

CET

📁 Related Datasheet

CEP3060 - N-Channel MOSFET (CET)
CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. Super hig.

CEP3070 - N-Channel MOSFET (CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell desi.

CEP30N15L - N-Channel MOSFET (CET)
CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super.

CEP30N3 - N-Channel Enhancement Mode Field Effect Transistor (CET)
CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V.

CEP30P03 - P-Channel MOSFET (CET)
CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mΩ @VGS = -10V. RDS(ON) =50mΩ @VGS = -4.5V. Sup.

CEP3100 - N-Channel MOSFET (CET)
CEP3100 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. Sup.

CEP3120 - N-Channel MOSFET (CET)
CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high.

CEP35P03 - P-Channel MOSFET (CET)
CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super h.

CEP35P10 - P-Channel MOSFET (CET)
CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = .

CEP01N6 - N-Channel MOSFET (CET)
CEP01N6/CEB01N6 CEI01N6/CEF01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 6.