CEP35P10
CET
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P-channel mosfet.
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CEP35P03 - P-Channel MOSFET
(CET)
CEP35P03/CEB35P03
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super h.
CEP3060 - N-Channel MOSFET
(CET)
CEP3060/CEB3060
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V.
Super hig.
CEP3070 - N-Channel MOSFET
(CET)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell desi.
CEP30N15L - N-Channel MOSFET
(CET)
CEP30N15L/CEB30N15L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V.
Super.
CEP30N3 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEP30N3/CEB30N3
CEF30N3
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP30N3 CEB30N3 CEF30N3
VDSS 300V 300V
300V.
CEP30P03 - P-Channel MOSFET
(CET)
CEP30P03/CEB30P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -30A, RDS(ON) =32mΩ @VGS = -10V. RDS(ON) =50mΩ @VGS = -4.5V.
Sup.
CEP3100 - N-Channel MOSFET
(CET)
CEP3100
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 47A,RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V.
Sup.
CEP3120 - N-Channel MOSFET
(CET)
CEP3120/CEB3120
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high.
CEP3205 - N-Channel Enhancement Mode Field Effect Transistor
(CET)
..
N-Channel Enhancement Mode Field Effect Transistor FEATURES
55V, 108.5A, RDS(ON) = 8.5mΩ @VGS = 10V. Super high dense cell design.
CEP01N6 - N-Channel MOSFET
(CET)
CEP01N6/CEB01N6 CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 6.