1N60S Datasheet - CHINA BASE

1N60S SILICON SCHOTTKY BARRIER DIODE

1N60P, 1N60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to 1N60P and 1N60S Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range 1.9 max 3.9 max R5 max 4.5± 1.0 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.

1N60S Datasheet (138.52 KB)

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Datasheet Details

Part number:

1N60S

Manufacturer:

CHINA BASE

File Size:

138.52 KB

Description:

Silicon schottky barrier diode.

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1N60S SILICON SCHOTTKY BARRIER DIODE CHINA BASE

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