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MSL120N10G N-Channel Enhancement Mode MOSFET

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Description

* Main Product Characteristics VDS RDS(on),typ RDS(on),typ ID VGS=10V VGS=4.5V 100V 9.5mΩ 11.5mΩ 12A * .
2 2 2 2 3 3 1 3 Preliminary. Absolute Maximum Ratings (TJ = 25OC unless otherwise specified) PARAMETER CONDITIONS Continuous Drain Curre.

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Datasheet Specifications

Part number
MSL120N10G
Manufacturer
CITC
File Size
1.54 MB
Datasheet
MSL120N10G-CITC.pdf
Description
N-Channel Enhancement Mode MOSFET

Features

* High speed power switching, logic level
* Enhanced body diode dv/dt capability
* Enhanced avalanche ruggedness
* 100% UIS tested, 100% Rg tested
* Lead free, halogen free

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