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MSL049P03G

P-Channel Enhancement Mode MOSFET

MSL049P03G Features

* -30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V

* Super high dense cell design

* Reliable and Rugged.

* Lead free and green device available (RoHS compliant).

* HBM ESD protection level pass 8KV. Note: The diode connected b

MSL049P03G General Description

DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET
* Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward Current(.

MSL049P03G Datasheet (711.77 KB)

Preview of MSL049P03G PDF

Datasheet Details

Part number:

MSL049P03G

Manufacturer:

CITC

File Size:

711.77 KB

Description:

P-channel enhancement mode mosfet.

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MSL049P03G P-Channel Enhancement Mode MOSFET CITC

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