MSL049P03G Datasheet - CITC

MSL049P03G P-Channel Enhancement Mode MOSFET

DDDD Top View of SOP-8 ( 5,6,7,8 ) D D DD SSSG (4) G SSS (1, 2, 3) P- Channel MOSFET * Absolute Maximum Ratings (TA = 25OC unless otherwise specified) PARAMETER CONDITIONS Drain-Source Voltage Pulsed Drain Current(Note:1) Gate-Source Voltage VGS =-10V Diode Continuous Forward Current(.

MSL049P03G Features

* -30V/-23.8A RDS(ON) = 4.9mΩ (max.) @ VGS= -10V RDS(ON) = 8.2mΩ (max.) @ VGS= -4.5V

* Super high dense cell design

* Reliable and Rugged.

* Lead free and green device available (RoHS compliant).

* HBM ESD protection level pass 8KV. Note: The diode connected b

MSL049P03G-CITC.pdf