CRTD080N04L2-G - Silicon N-Channel Power MOSFET
CRTD080N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ
CRTD080N04L2-G Features
* Fast Switching
* Low ON Resistance(Rdson≤7.8mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Sym
