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CRTD028N03L2-G Datasheet - CR Micro

CRTD028N03L2-G Silicon N-Channel Power MOSFET

CRTD028N03L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ .

CRTD028N03L2-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.7mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS

CRTD028N03L2-G-CRMicro.pdf

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Datasheet Details

Part number:

CRTD028N03L2-G

Manufacturer:

CR Micro

File Size:

619.70 KB

Description:

Silicon n-channel power mosfet.

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CRTD028N03L2-G CRTD028N03L2-G Silicon N-Channel Power MOSFET CR Micro

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