Datasheet4U Logo Datasheet4U.com

CRTD028N04L2-G Datasheet - CR Micro

CRTD028N04L2-G Silicon N-Channel Power MOSFET

CRTD028N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device can VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ .

CRTD028N04L2-G Features

* Fast Switching

* Low ON Resistance(Rdson≤2.5mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： load switch and power switch applications. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS

CRTD028N04L2-G Datasheet (620.51 KB)

Preview of CRTD028N04L2-G PDF
CRTD028N04L2-G Datasheet Preview Page 2 CRTD028N04L2-G Datasheet Preview Page 3

Datasheet Details

Part number:

CRTD028N04L2-G

Manufacturer:

CR Micro

File Size:

620.51 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CRTD028N03L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD019N03L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD030N03L 30V Trench N-MOSFET (CR Micro)

CRTD030N04L 40V Trench N-MOSFET (CR Micro)

CRTD032N03L2P Silicon N-Channel Power MOSFET (CR Micro)

CRTD034N04L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD039N04L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD045N03L Trench N-MOSFET (CR Micro)

TAGS

CRTD028N04L2-G Silicon N-Channel Power MOSFET CR Micro

CRTD028N04L2-G Distributor