CRTD700N10S-V-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET CRTD700N10S-V-G General .
CRTD700N10S-V-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 17 which reduce the cond.

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CRTD700N10S-V-G Datasheet Preview — Preview of CRTD700N10S-V-G PDF

Datasheet Specifications

Part number: CRTD700N10S-V-G
Manufacturer: CR Micro
File Size: 1.17 MB
Datasheet: CRTD700N10S-V-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance (Rdson≤65mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Tc = 25 °C Continuous Drain Current Tc = 100 °C Pulsed Drain Current Tc = 25 °C Gate-to-Source Voltage

CRTD700N10S-V-G Distributors

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CRTD700N10S-V-G Silicon N-Channel Power MOSFET CR Micro

CR Micro CRTD700N10S-V-G-like datasheet