CRTD700N10S-V-G Datasheet - CR Micro

CRTD700N10S-V-G Silicon N-Channel Power MOSFET

CRTD700N10S-V-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 17 which reduce the conduction loss, improve switching PD 56.8 RDS(ON) 52 performance and enhance the avalanche energy. The transistor can be used in various power switc.

CRTD700N10S-V-G Features

* Fast Switching

* Low ON Resistance (Rdson≤65mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free and Lead Free Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise

CRTD700N10S-V-G-CRMicro.pdf