CS24N60ANR - Silicon N-Channel Power MOSFET
VDSS 600 V CS24N60 ANR, the silicon N-channel Enhanced ID 24 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 420 W which reduce the conduction loss, improve switching RDS(ON)Typ 0.21 Ω performance and enhance the avalanche energy.
The transistor can be used
CS24N60ANR Features
* l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:90.5 nC) l Low Reverse transfer capacitances(Typical:19 pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（TJ= 25℃ unless otherwise specified）：
