CS24N40A8 - Silicon N-Channel Power MOSFET
CS24N40 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 400 24 250 0.14 performance and enhance the avalanche energy.
The transistor can be used in various power sw
CS24N40A8 Features
* l Fast Switching l Low ON Resistance(Rdson≤0.175Ω) l Low Gate Charge (Typical Data:62nC) l Low Reverse transfer capacitances(Typical:37pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para
