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CS24N40A8

Silicon N-Channel Power MOSFET

CS24N40A8 Features

* l Fast Switching l Low ON Resistance(Rdson≤0.175Ω) l Low Gate Charge (Typical Data:62nC) l Low Reverse transfer capacitances(Typical:37pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Para

CS24N40A8 General Description

CS24N40 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 400 24 250 0.14 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS24N40A8 Datasheet (343.59 KB)

Preview of CS24N40A8 PDF

Datasheet Details

Part number:

CS24N40A8

Manufacturer:

Huajing Microelectronics

File Size:

343.59 KB

Description:

Silicon n-channel power mosfet.

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CS24N40A8 Silicon N-Channel Power MOSFET Huajing Microelectronics

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