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CS20N60A8H

Silicon N-Channel Power MOSFET

CS20N60A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS20N60A8H General Description

CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS20N60A8H Datasheet (433.95 KB)

Preview of CS20N60A8H PDF

Datasheet Details

Part number:

CS20N60A8H

Manufacturer:

Huajing Microelectronics

File Size:

433.95 KB

Description:

Silicon n-channel power mosfet.

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CS20N60A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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