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CS20N60ANH

Silicon N-Channel Power MOSFET

CS20N60ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS20N60ANH General Description

CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS20N60ANH Datasheet (437.42 KB)

Preview of CS20N60ANH PDF

Datasheet Details

Part number:

CS20N60ANH

Manufacturer:

Huajing Microelectronics

File Size:

437.42 KB

Description:

Silicon n-channel power mosfet.

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CS20N60ANH Silicon N-Channel Power MOSFET Huajing Microelectronics

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