CS20N60ANH - Silicon N-Channel Power MOSFET
CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy.
The transistor can be used in various power sw
CS20N60ANH Features
* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para
