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CS20N60ANH Datasheet - Huajing Microelectronics

CS20N60ANH Silicon N-Channel Power MOSFET

CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 20 250 0.36 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS20N60ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Para

CS20N60ANH-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS20N60ANH

Manufacturer:

Huajing Microelectronics

File Size:

437.42 KB

Description:

Silicon n-channel power mosfet.

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