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CS220N04A8H

Silicon N-Channel Power MOSFET

CS220N04A8H Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications: UPS,DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symb

CS220N04A8H General Description

CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS220N04A8H Datasheet (354.47 KB)

Preview of CS220N04A8H PDF

Datasheet Details

Part number:

CS220N04A8H

Manufacturer:

Huajing Microelectronics

File Size:

354.47 KB

Description:

Silicon n-channel power mosfet.

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CS220N04A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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