CS220N04A8H Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS220N04A8H, Silicon N-Channel Power MOSFET

CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy.

The transistor can be used in various power sw

CS220N04A8H Features

* l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symb