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CS20N65FA9H

Silicon N-Channel Power MOSFET

CS20N65FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS20N65FA9H General Description

CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 20 85 0.37 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS20N65FA9H Datasheet (430.75 KB)

Preview of CS20N65FA9H PDF

Datasheet Details

Part number:

CS20N65FA9H

Manufacturer:

Huajing Microelectronics

File Size:

430.75 KB

Description:

Silicon n-channel power mosfet.

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CS20N65FA9H Silicon N-Channel Power MOSFET Huajing Microelectronics

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