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CS20N60FA9H Datasheet - Huajing Microelectronics

CS20N60FA9H Silicon N-Channel Power MOSFET

CS20N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit .

CS20N60FA9H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.45Ω) l Low Gate Charge (Typical Data:61nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test 600 V 20 A 85 W 0.36 Ω Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwis

CS20N60FA9H-HuajingMicroelectronics.pdf

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Datasheet Details

Part number:

CS20N60FA9H

Manufacturer:

Huajing Microelectronics

File Size:

430.92 KB

Description:

Silicon n-channel power mosfet.

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