CS20N60AND Silicon N-Channel Power MOSFET

Description

Huajing Discrete Devices Silicon General .
CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number: CS20N60AND
Manufacturer: TGW
File Size: 814.69 KB
Datasheet: CS20N60AND-TGW.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Automotive、 DC Motor Control and Class D Amplifier. Absolute（ Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDM a1 Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Rating 600 20 13 80 ±30 1500 250 7

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CS20N60AND Silicon N-Channel Power MOSFET TGW

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