CS20N60AND
TGW
814.69kb
Silicon n-channel power mosfet. CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction
TAGS
📁 Related Datasheet
CS20N60ANH - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS20N60 ANH
○R
General Description:
CS20N60 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
CS20N60A8H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS20N60 A8H
○R
General Description:
CS20N60 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
CS20N60A8R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS20N60 A8R
General Description:
CS20N60 A8R the silicon N-channel Enhanced
VDMOSFET, is obtained by the self-a.
CS20N60FA9H - Silicon N-Channel Power MOSFET
(Huajing Microelectronics)
Silicon N-Channel Power MOSFET
CS20N60F A9H
○R
General Description:
CS20N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-.
CS20N60FA9R - Silicon N-Channel Power MOSFET
(CR Micro)
Silicon N-Channel Power MOSFET
○R
CS20N60F A9R
General Description:
CS20N60F A9R the silicon N-channel Enhanced
VDMOSFET, is obtained by the self.
CS20N65A - N-Channel Enhancement Mode Power MOSFET
(LINGXUN)
N-Channel Enhancement Mode Power MOSFET
CS20N65A
MAIN CHARACTERISTICS
ID VDSS RDSON-max (@VGS=10V) QG-typ
20A 650V 0.5Ω 58nC
CS20N65A1/TO-220AB
F.
CS20N65A1 - N-Channel Enhancement Mode Power MOSFET
(LINGXUN)
N-Channel Enhancement Mode Power MOSFET
CS20N65A
MAIN CHARACTERISTICS
ID VDSS RDSON-max (@VGS=10V) QG-typ
20A 650V 0.5Ω 58nC
CS20N65A1/TO-220AB
F.
CS20N65A2 - N-Channel Enhancement Mode Power MOSFET
(LINGXUN)
N-Channel Enhancement Mode Power MOSFET
CS20N65A
MAIN CHARACTERISTICS
ID VDSS RDSON-max (@VGS=10V) QG-typ
20A 650V 0.5Ω 58nC
CS20N65A1/TO-220AB
F.
CS20N65A3 - N-Channel Enhancement Mode Power MOSFET
(LINGXUN)
N-Channel Enhancement Mode Power MOSFET
CS20N65A
MAIN CHARACTERISTICS
ID VDSS RDSON-max (@VGS=10V) QG-typ
20A 650V 0.5Ω 58nC
CS20N65A1/TO-220AB
F.
CS20N65A6 - N-Channel Enhancement Mode Power MOSFET
(LINGXUN)
N-Channel Enhancement Mode Power MOSFET
CS20N65A
MAIN CHARACTERISTICS
ID VDSS RDSON-max (@VGS=10V) QG-typ
20A 650V 0.5Ω 58nC
CS20N65A1/TO-220AB
F.