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CS20N50A8H

Silicon N-Channel Power MOSFET

CS20N50A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symb

CS20N50A8H General Description

CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25 performance and enhance the avalanche energy. The transistor can be used in various power s.

CS20N50A8H Datasheet (352.23 KB)

Preview of CS20N50A8H PDF

Datasheet Details

Part number:

CS20N50A8H

Manufacturer:

Huajing Microelectronics

File Size:

352.23 KB

Description:

Silicon n-channel power mosfet.

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CS20N50A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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