CS20N50A8H Datasheet - Huajing Microelectronics

CS20N50A8H Silicon N-Channel Power MOSFET

CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 500 20 230 0.25 performance and enhance the avalanche energy. The transistor can be used in various power s.

CS20N50A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symb

CS20N50A8H-HuajingMicroelectronics.pdf