CS20N50ANH Silicon N-Channel Power MOSFET

Huajing Discrete Devices

Description

Silicon N-Channel Power MOSFET ○R CS20N50 ANH General .
VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which.

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Datasheet Specifications

Part number: CS20N50ANH
Manufacturer: Huajing Discrete Devices
File Size: 247.18 KB
Datasheet: CS20N50ANH-HuajingDiscreteDevices.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-S

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CS20N50ANH Silicon N-Channel Power MOSFET Huajing Discrete Devices

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