CS20N50ANH Datasheet - Huajing Discrete Devices

CS20N50ANH Silicon N-Channel Power MOSFET

VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 230 which reduce the conduction loss, improve switching RDS(ON)Typ 0.25 performance and enhance the avalanche energy. The transistor can be used in various .

CS20N50ANH Features

* l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Sy

CS20N50ANH-HuajingDiscreteDevices.pdf