CS20N50ANH Datasheet, Mosfet, Huajing Discrete Devices

CS20N50ANH Features

• Mosfet l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test App

PDF File Details

Part number:

CS20N50ANH

Manufacturer:

Huajing Discrete Devices

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247.18kb

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📄 Datasheet

Description:

Silicon n-channel power mosfet. VDSS 500 CS20N50 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=

CS20N50ANH Application

• Applications Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1

TAGS

CS20N50ANH

Huajing Discrete Devices

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