Datasheet Details
- Part number
- CS20N50ANH
- Manufacturer
- Huajing Discrete Devices
- File Size
- 247.18 KB
- Datasheet
- CS20N50ANH-HuajingDiscreteDevices.pdf
- Description
- Silicon N-Channel Power MOSFET
CS20N50ANH Description
Silicon N-Channel Power MOSFET ○R CS20N50 ANH General .
VDSS
500
CS20N50 ANH, the silicon N-channel Enhanced ID
20
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃)
230
which.
CS20N50ANH Applications
* Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-S
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