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CS24N50ANHD Datasheet - Huajing Microelectronics

CS24N50ANHD Silicon N-Channel Power MOSFET

CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 24 230 0.18 performance and enhance the avalanche energy. The transistor can be used in various power s.

CS24N50ANHD Features

* l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

CS24N50ANHD-HuajingDiscreteDevices.pdf

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Datasheet Details

Part number:

CS24N50ANHD

Manufacturer:

Huajing Microelectronics

File Size:

677.62 KB

Description:

Silicon n-channel power mosfet.

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