CS24N50ANHD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS24N50ANHD Datasheet Preview — Preview of CS24N50ANHD PDF

Datasheet Details

Part number	CS24N50ANHD
Manufacturer	Huajing Microelectronics
File Size	677.62 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS24N50ANHD-HuajingDiscreteDevices.pdf

CS24N50ANHD Product details

Description

CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 24 230 0.18 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-3P(N), which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |