CS24N50ANHD - Silicon N-Channel Power MOSFET
CS24N50 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 24 230 0.18 performance and enhance the avalanche energy.
The transistor can be used in various power s
CS24N50ANHD Features
* l Fast Switching l Low ON Resistance(Rdson≤0.26Ω) l Low Gate Charge (Typical Data:96nC) l Low Reverse transfer capacitances(Typical:44pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol