CS80N07A0
Description
：
VDSS
CS80N07 A0, the silicon N-channel Enhanced
ID（Silicon limited current） 80
VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃)
156 W which reduce the conduction loss, improve switching
RDS(ON)Typ
6.5 mΩ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤7.9mΩ) l Low Gate Charge (Typical Data:51n C) l Low Reverse transfer capacitances(Typical:174p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current TC =25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC =25 °C Gate-to-Source Voltage Single Pulse...
