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CS80N07AR - Silicon N-Channel Power MOSFET

General Description

which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤7.9mΩ) l Low Gate Charge (Typical Data:51nC) l Low Reverse transfer capacitances(Typical:174pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS80N07AR
Manufacturer CR Micro
File Size 430.76 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS80N07AR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS80N07 AR General Description： VDSS 70 V CS80N07 AR, the silicon N-channel Enhanced ID（Silicon limited current 80 A VDMOSFETs, is obtained by advanced Trench Technology ID（Package limited） 60 A which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor PD(TC=25℃) RDS(ON)Typ 156 W 6.5 mΩ can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤7.