CS80N07A0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS80N07 A0 General Description： VDSS CS80N07 A0, the silicon N-channel Enhanced ID（Silicon limited current） 80 VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃) 156 W which reduce the conduction loss, improve switching RDS(ON)Typ 6.5 mΩ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤7.9mΩ) l Low Gate Charge (Typical Data:51nC) l Low Reverse transfer capacitances(Typical:174pF) l 100% Single...