CS80N07A4 Overview
Description
： VDSS 70 V CS80N07 A4, the silicon N-channel Enhanced ID（Silicon limited current） 80 A VDMOSFETs, is obtained by advanced Trench Technology PD(TC=25℃) 156 W which reduce the conduction loss, improve switching RDS(ON)Typ 6.5 mΩ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤7.9mΩ)
- Low Gate Charge (Typical Data:51nC)
- Low Reverse transfer capacitances(Typical:174pF)
- 100% Single Pulse avalanche energy Test
