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Silicon N-Channel Power MOSFET
○R
CS80N07 A8
General Description：
VDSS
70
V
CS80N07 A8, the silicon N-channel Enhanced
ID（Silicon limited current） 80
A
VDMOSFETs, is obtained by advanced Trench Technology
PD(TC=25℃)
156 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
6.5 mΩ
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
Fast Switching Low ON Resistance(Rdson≤7.9mΩ) Low Gate Charge (Typical Data:51nC) Low Reverse transfer capacitances(Typical:174pF) 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS80N07A8 Datasheet
