HGE055NE4A Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R HGE055NE4A General .
VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.

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Datasheet Specifications

Part number: HGE055NE4A
Manufacturer: CR Micro
File Size: 673.32 KB
Datasheet: HGE055NE4A-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances

Applications

* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters Absolute（Ta= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed D

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HGE055NE4A Silicon N-Channel Power MOSFET CR Micro

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