HGE055NE4A Datasheet - CR Micro

HGE055NE4A Silicon N-Channel Power MOSFET

VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy. The transistor RDS(ON).

HGE055NE4A Features

* Fast Switching

* Low ON Resistance(Rdson≤5.5mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications：

* Power switch circuit of adaptor and charger.

* Synchronus Rectification in DC/DC Converters Absolute（Ta

HGE055NE4A-CRMicro.pdf

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Datasheet Details

Part number:

HGE055NE4A

Manufacturer:

CR Micro

File Size:

673.32 KB

Description:

Silicon n-channel power mosfet.

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HGE055NE4A HGE055NE4A Silicon N-Channel Power MOSFET CR Micro

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