HGE055NE4A Datasheet - CR Micro

HGE055NE4A Silicon N-Channel Power MOSFET

VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy. The transistor RDS(ON).

HGE055NE4A Features

* Fast Switching

* Low ON Resistance(Rdson≤5.5mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications：

* Power switch circuit of adaptor and charger.

* Synchronus Rectification in DC/DC Converters Absolute（Ta

HGE055NE4A Datasheet (673.32 KB)

HGE055NE4A Datasheet Preview — Preview of HGE055NE4A PDF

Datasheet Details

Part number:

HGE055NE4A

Manufacturer:

CR Micro

File Size:

673.32 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

HGE090N06A Silicon N-Channel Power MOSFET (CR Micro)

HG-0111 GaAs Hall Element (AKM)

HG-0112 GaAs Hall Element (AKM)

HG-0113 GaAs Hall Element (AKM)

HG-0114 GaAs Hall Element (AKM)

HG-0115 GaAs Hall Element (AKM)

HG-0711 GaAs Hall Element (AKM)

HG-0712 GaAs Hall Element (AKM)

TAGS

HGE055NE4A Silicon N-Channel Power MOSFET CR Micro

HGE055NE4A Distributor