Datasheet Details
- Part number
- HGE055NE4A
- Manufacturer
- CR Micro
- File Size
- 673.32 KB
- Datasheet
- HGE055NE4A-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
HGE055NE4A Description
Silicon N-Channel Power MOSFET ○R HGE055NE4A General .
VDSS
45
V
HGE055NE4A, the silicon N-channel Enhanced ID
18
A
VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃)
3.
HGE055NE4A Features
* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
HGE055NE4A Applications
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters
Absolute（Ta= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 PD TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed D
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