HGE055NE4A - Silicon N-Channel Power MOSFET
VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 3.1 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 4.4 mΩ performance and enhance the avalanche energy.
The transistor RDS(ON)
HGE055NE4A Features
* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications：
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters Absolute（Ta
