HX8N80 - N-Channel MOSFET

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Datasheet Details

Part number: HX8N80
Manufacturer: CRE
File Size: 843.37 KB
Datasheet: HX8N80-CRE.pdf
Description: N-Channel MOSFET

HX8N80 Product details

Description

The HX8N80(C) N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

RDS(ON) = 1.75 Ω@VGS = 10 V.
Low gate charge ( typical 27nC).
High ruggedness.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability.
Symbol CFF/P8N80.
Ordering Information Order Number Normal Lead Free Plating HX8N80(C)-TA3-T HX8N80(C)L-TA3-T HX8N80(C)-TF3-T HX8N80(C)L-TF3-T Note:Pin Assignment: G:Gate D:Drain S:Source HX8N80(C)L-TA3-T （1）Packing Type （2）Package Type （3）Lead Plating Package TO-220 TO-220F Pin Assi.

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N-Channel MOSFET CRE

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