HX8N60

N-Channel MOSFET

HX8N60 Features

* RDS(ON)=1.2Ω@VGS=10V

* Ultra Low gate charge(typical 28nC)

* Low reverse transfer capacitance(Crss=typical 12.0pF)

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability,high ruggedness

* Symbol Power MOSFET

* Ordering Information Order

HX8N60 General Description

The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually usually used at high speed switching applications in power supplies.

HX8N60 Datasheet (299.13 KB)

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Datasheet Details

Part number:

HX8N60

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File Size:

299.13 KB

Description:

N-channel mosfet.

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HX8N60 N-Channel MOSFET HX

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HX8N60 Features

HX8N60 General Description

Datasheet Details

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HX8N60 Distributor