HX8N60 Datasheet (HX) - N-Channel MOSFET

HX8N60, N-Channel MOSFET

The HX8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually usually used at high speed switching applications in power supplies

HX8N60 Features

* RDS(ON)=1.2Ω@VGS=10V

* Ultra Low gate charge(typical 28nC)

* Low reverse transfer capacitance(Crss=typical 12.0pF)

* Fast switching capability

* Avalanche energy tested

* Improved dv/dt capability,high ruggedness

* Symbol Power MOSFET

* Ordering Information Order