Part number:
C3M0075120D
Manufacturer:
CREE
File Size:
815.22 KB
Description:
Silicon carbide power mosfet
C3M0075120D Datasheet (815.22 KB)
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Wolfspeed | C3M0075120D | SICFET N-CH 1200V 30A TO247-3 | DigiKey | 358 | 120 units |
$11.6
|
🛒 Buy Now |
C3M0075120D Datasheet (815.22 KB)
C3M0075120D
CREE
815.22 KB
Silicon carbide power mosfet
* Package
* C3MTM SiC MOSFET technology
* High blocking voltage with low On-resistance
* High speed switching with low capacitances
* Fast intrinsic diode with low reverse recovery (Qrr)
* Halogen free, RoHS compliant Benefits
* Higher system ef
📁 Related Datasheet
C3M0075120D - Silicon Carbide Power MOSFET
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C3M0075120D
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Features
• C3MTM SiC MOSFET technology
• High blocking .
C3M0075120D-A - Silicon Carbide Power MOSFET
(Wolfspeed)
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Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
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• C3MTM SiC MOSFET technology
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C3M0075120J - Silicon Carbide Power MOSFET
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VDS
1200 V
C3M0075120J
ID @ 25˚C
30 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
75 mΩ
N-Channel Enhancement Mode
.
C3M0075120J - Silicon Carbide Power MOSFET
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• 3rd generation SiC MOSFET technology • Low impe.
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C3M0075120K - Silicon Carbide Power MOSFET
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VDS 1200 V
C3M0075120K
ID @ 25˚C
30 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 75 mΩ
N-Channel Enhancement Mode .
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