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CS5R50C4RDP-G Silicon N-Channel Power MOSFET

CS5R50C4RDP-G Description

Silicon N-Channel Power MOSFET ○R CS5R50 C4RDP-G General .
CS5R50 C4RDP-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve.

CS5R50C4RDP-G Features

* Fast Switching
* Low ON Resistance(Rdson≤2.0Ω)
* Low Gate Charge (Typical Data:14.9nC)
* Low Reverse transfer capacitances(Typical: 1.9pF)
* 100% Single Pulse avalanche energy Test

CS5R50C4RDP-G Applications

* Motor driver. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Puls

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Datasheet Details

Part number
CS5R50C4RDP-G
Manufacturer
CR Micro
File Size
791.36 KB
Datasheet
CS5R50C4RDP-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

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Silicon N-Channel Power MOSFET CR Micro
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