Datasheet Details
- Part number
- HGE090N06A
- Manufacturer
- CR Micro
- File Size
- 788.82 KB
- Datasheet
- HGE090N06A-CRMicro.pdf
- Description
- Silicon N-Channel Power MOSFET
HGE090N06A Description
Silicon N-Channel Power MOSFET ○R HGE090N06A General .
VDSS
60
V
HGE090N06A, the silicon N-channel Enhanced VDMOSFETs, ID
14
A
is obtained by the high density Trench technology which reduce PD(Ta=2.
HGE090N06A Features
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
HGE090N06A Applications
* Power switch circuit of adaptor and charger.
* Synchronus Rectification in DC/DC Converters
Absolute（TA= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 PD TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed D
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