Description
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The 4N29, 4N30, 4N31, 4N32, and 4N33 series consist of a photodarlington transistor optically coupled to an Infrared-emitting diode in a 6-lead DIP DM.
Features
* High isolation 5000 VRMS
* Patented coplanar structure DMC-Isolator®
* DC input with Transistor output
* Operating Temperature range - 55 °C to 100 °C
* External Creepage ≥ 7.4mm
* Distance Through Isolation ≥ 0.4mm
* Clearance Distance ≥ 7.5
Applications
* Switch mode power supplies
* Computer peripheral interface
* Microprocessor system interface
Package Outline
Schematic
Note: Different bending options available. See package dimension. © 2022 CT MICRO INTERNATIONAL CORPORATION ALL RIGHTS RESERVED. Page 1
Rev.5 Oct, 20
