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CTL0412ND N-Channel MOSFET

CTL0412ND Description

CTL0412ND N-Channel Enhancement MOSFET .
The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

CTL0412ND Features

* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A
* Continuous Drain Current at TC=25℃ID = 4.1A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free Descrip

CTL0412ND Applications

* tions. Applications
* Power Management
* Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 Source 2 Gate 2 Drain 1 Source 1 Drain 2 CT Micro Proprietary & Confidential Page 1 Rev 1 Aug, 2013 CTL0412ND N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC

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Datasheet Details

Part number
CTL0412ND
Manufacturer
CT Micro
File Size
1.02 MB
Datasheet
CTL0412ND-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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