CTL0412ND Datasheet - CT Micro

CTL0412ND N-Channel MOSFET

The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications tions. Applications * Power Management * Lithium Ion Battery Package Outline Schematic Pin 1 Pin 2 Gate 1 So.

CTL0412ND Features

* Drain-Source Breakdown Voltage VDSS 20 V

* Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A

* Continuous Drain Current at TC=25℃ID = 4.1A

* Advanced high cell density Trench Technology

* RoHS Compliance & Halogen Free Descrip

CTL0412ND Datasheet (1.02 MB)