Description
CTL0412ND N-Channel Enhancement MOSFET .
The CTL0412ND uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.
Features
* Drain-Source Breakdown Voltage VDSS 20 V
* Drain-Source On-Resistance
RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A
* Continuous Drain Current at TC=25℃ID = 4.1A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free
Descrip
Applications
* tions. Applications
* Power Management
* Lithium Ion Battery
Package Outline
Schematic
Pin 1
Pin 2
Gate 1
Source 2
Gate 2
Drain 1 Source 1 Drain 2
CT Micro Proprietary & Confidential
Page 1
Rev 1 Aug, 2013
CTL0412ND N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
