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CTL0404NS-R3 N-Channel MOSFET

CTL0404NS-R3 Description

CTL0404NS-R3 N-Channel Enhancement MOSFET .
The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTL0404NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 40 V
* Drain-Source On-Resistance RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A ℃
* Continuous Drain Current at TA=25 ID =4.0A
* Advanced high cell density Trench Technology
* RoHS Compliance & Ha

CTL0404NS-R3 Applications

* Power Management
* Portable Equipment
* DC/DC Converter
* Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTL0404NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rati

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Datasheet Details

Part number
CTL0404NS-R3
Manufacturer
CT Micro
File Size
786.21 KB
Datasheet
CTL0404NS-R3-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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