CTL0404NS-R3 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CTL0404NS-R3
Manufacturer	CT Micro
File Size	786.21 KB
Description	N-Channel MOSFET
Datasheet	CTL0404NS-R3-CTMicro.pdf

CTL0404NS-R3 Product details

Description

The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management Portable Equipment DC/DC Converter Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTL0404NS-R3 N-Cha

Features

Drain-Source Breakdown Voltage VDSS 40 V.
Drain-Source On-Resistance RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A ℃.
Continuous Drain Current at TA=25 ID =4.0A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |