CTL0404NS-R3 Datasheet (CT Micro)

CTL0404NS-R3, N-Channel MOSFET

The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Applications * Power Management * Portable Equipmen

CTL0404NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 40 V

* Drain-Source On-Resistance RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A ℃

* Continuous Drain Current at TA=25 ID =4.0A

* Advanced high cell density Trench Technology

* RoHS Compliance & Ha