GC0401MP Datasheet, Speaker, CUI

PDF File Details

Part number:

GC0401MP

Manufacturer:

CUI

File Size:

342.34kb

Download:

📄 Datasheet

Description:

Speaker. speaker Date: 7/03/2007 Unit: mm Page No: 1 of 2 40 mm 1 ½ inch. 8 Ohm ± 15% at 0.8 KHz 1 V 600 Hz ± 120 Hz at 1V 80 dB/w

TAGS

GC0401MP

CUI

📁 Related Datasheet

GC01L60 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)
.. Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.

GC02MPS12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GC02MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GC0308 - VGA CMOS Image Sensor (GalaxyCore)
    1/6.5’’ VGA GCCM0O3S08I mage Sensor   DataSheet   2010-01-28 .GalaxyCore Inc   GC0308 -- VGA CMOS Image Sensor Content  1.  Sensor Overview .

GC0351P - Notebook Speaker (ETC)
For more information, please visit the product page. MODEL: GC0351P │ DESCRIPTION: SPEAKER FEATURES • plastic frame • slim profile • S.P. level 80 dB .

GC0351P - Notebook Speaker (ETC)
For more information, please visit the product page. MODEL: GC0351P │ DESCRIPTION: SPEAKER FEATURES • plastic frame • slim profile • S.P. level 80 dB .

GC0351P-3 - Notebook Speaker (CUI)
PART NUMBER: GC0351P-3 SPECIFICATIONS nominal size impedance resonant frequency sound pressure level response input power operation buzz, rattle, etc..

GC05MPS12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GC05MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GC05MPS12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GC05MPS12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GC05MPS33J - Silicon Carbide Schottky Diode (GeneSiC)
GC05MPS33J 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Low VF for High Temper.

GC08MPS12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GC08MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.