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GC05MPS33J - Silicon Carbide Schottky Diode

GC05MPS33J Description

GC05MPS33J 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

GC05MPS33J Features

* Enhanced Surge and Avalanche Robustness
* Low VF for High Temperature Operation
* Superior Figure of Merit QC/IF
* Low Thermal Resistance
* Low Reverse Leakage Current
* Temperature Independent Fast Switching
* Positive Temperature Coefficien

GC05MPS33J Applications

* High Voltage Sensing
* Oil Drilling
* Geothermal Instrumentation
* High Voltage Multipliers
* High Frequency Rectifiers
* High Voltage Switching
* Pulsed Power Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) Parameter Repeti

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Datasheet Details

Part number
GC05MPS33J
Manufacturer
GeneSiC
File Size
713.25 KB
Datasheet
GC05MPS33J-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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GeneSiC GC05MPS33J-like datasheet