Datasheet Specifications
- Part number
- GC01L60
- Manufacturer
- GTM
- File Size
- 298.13 KB
- Datasheet
- GC01L60_GTM.pdf
- Description
- N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID.
Features
* Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source VoltApplications
* or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-07GC01L60 Distributors
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