* Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A
* Excellent DC current gain characteristics
* Wide SOA
* RoHS compliant package Symbol BTB857T3 Outline TO-126 B：Base C：Collector E：Emitter E CB Ordering Information Device BTB857T3-0-BL-G BTB857T3-0-UH-G Pac
BTB857T3 Datasheet (303.80 KB)
BTB857T3
CYStech
303.80 KB
Pnp transistor.
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB857T3 Spec. No. : C811T3 Issued Date : 2017.01.18 Revised Date : 2018.07.02 P.
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